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K4B4G0846E-BYMA0CV Технические параметры

Samsung Semiconductor  K4B4G0846E-BYMA0CV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 64M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 1866
Maximum Access Time (ns) 0.195
Address Bus Width (bit) 19
Minimum Operating Supply Voltage (V) 1.283|1.425
Typical Operating Supply Voltage (V) 1.35|1.5
Свойство продукта Значение свойства
Maximum Operating Supply Voltage (V) 1.45|1.575
Operating Current (mA) 64
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 11
PCB changed 78
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Active
Pin Count 78
Organization 512Mx8
Просмотр сходства
K4B4G0846E-BYMA0CV brand manufacturers: Samsung Semiconductor, Anli stock, K4B4G0846E-BYMA0CV reference price.Samsung Semiconductor. K4B4G0846E-BYMA0CV parameters, K4B4G0846E-BYMA0CV Datasheet PDF and pin diagram description download.You can use the K4B4G0846E-BYMA0CV Memory, DSP Datesheet PDF, find K4B4G0846E-BYMA0CV pin diagram and circuit diagram and usage method of function,K4B4G0846E-BYMA0CV electronics tutorials.You can download from the Anli.