ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

K4B4G1646D-BCNB0CV Технические параметры

Samsung Semiconductor  K4B4G1646D-BCNB0CV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
ECCN (US) EAR99
Automotive No
EU RoHS Compliant
PCB changed 90
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 2133
Свойство продукта Значение свойства
Maximum Access Time (ns) 0.18
Address Bus Width (bit) 18
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Operating Current (mA) 149
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
Part Status Active
Pin Count 90
Organization 256Mx16
K4B4G1646D-BCNB0CV brand manufacturers: Samsung Semiconductor, Anli stock, K4B4G1646D-BCNB0CV reference price.Samsung Semiconductor. K4B4G1646D-BCNB0CV parameters, K4B4G1646D-BCNB0CV Datasheet PDF and pin diagram description download.You can use the K4B4G1646D-BCNB0CV Memory, DSP Datesheet PDF, find K4B4G1646D-BCNB0CV pin diagram and circuit diagram and usage method of function,K4B4G1646D-BCNB0CV electronics tutorials.You can download from the Anli.