ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

K4B4G1646D-BIH9 Технические параметры

Samsung Semiconductor  K4B4G1646D-BIH9 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1333
Maximum Access Time (ns) 0.255
Address Bus Width (bit) 18
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Operating Current (mA) 103
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Industrial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 90
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Unconfirmed
Pin Count 90
Organization 256Mx16
K4B4G1646D-BIH9 brand manufacturers: Samsung Semiconductor, Anli stock, K4B4G1646D-BIH9 reference price.Samsung Semiconductor. K4B4G1646D-BIH9 parameters, K4B4G1646D-BIH9 Datasheet PDF and pin diagram description download.You can use the K4B4G1646D-BIH9 Memory, DSP Datesheet PDF, find K4B4G1646D-BIH9 pin diagram and circuit diagram and usage method of function,K4B4G1646D-BIH9 electronics tutorials.You can download from the Anli.