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K4B4G1646D-BMK0TCV Технические параметры

Samsung Semiconductor  K4B4G1646D-BMK0TCV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Свойство продукта Значение свойства
Minimum Operating Supply Voltage (V) 1.425|1.283
Typical Operating Supply Voltage (V) 1.5|1.35
Maximum Operating Supply Voltage (V) 1.575|1.45
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Supplier Package FBGA
Part Status Obsolete
Pin Count 96
Organization 256Mx16
Просмотр сходства
K4B4G1646D-BMK0TCV brand manufacturers: Samsung Semiconductor, Anli stock, K4B4G1646D-BMK0TCV reference price.Samsung Semiconductor. K4B4G1646D-BMK0TCV parameters, K4B4G1646D-BMK0TCV Datasheet PDF and pin diagram description download.You can use the K4B4G1646D-BMK0TCV Memory, DSP Datesheet PDF, find K4B4G1646D-BMK0TCV pin diagram and circuit diagram and usage method of function,K4B4G1646D-BMK0TCV electronics tutorials.You can download from the Anli.