ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

K4B4G1646D-BYH9TCV Технические параметры

Samsung Semiconductor  K4B4G1646D-BYH9TCV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3 SDRAM
Chip Density (bit) 4G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1333
Maximum Access Time (ns) 0.255
Address Bus Width (bit) 18
Minimum Operating Supply Voltage (V) 1.425|1.283
Typical Operating Supply Voltage (V) 1.35|1.5
Свойство продукта Значение свойства
Maximum Operating Supply Voltage (V) 1.45|1.575
Operating Current (mA) 103
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Height 0.75
Package Width 7.5
Package Length 13.3
PCB changed 96
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Active
Pin Count 96
Organization 256Mx16
K4B4G1646D-BYH9TCV brand manufacturers: Samsung Semiconductor, Anli stock, K4B4G1646D-BYH9TCV reference price.Samsung Semiconductor. K4B4G1646D-BYH9TCV parameters, K4B4G1646D-BYH9TCV Datasheet PDF and pin diagram description download.You can use the K4B4G1646D-BYH9TCV Memory, DSP Datesheet PDF, find K4B4G1646D-BYH9TCV pin diagram and circuit diagram and usage method of function,K4B4G1646D-BYH9TCV electronics tutorials.You can download from the Anli.