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K4B8G1646D-MYMA0CV Технические параметры

Samsung Semiconductor  K4B8G1646D-MYMA0CV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR3L SDRAM
Chip Density (bit) 8G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 64M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Свойство продукта Значение свойства
Minimum Operating Supply Voltage (V) 1.283|1.425
Typical Operating Supply Voltage (V) 1.35|1.5
Maximum Operating Supply Voltage (V) 1.45|1.575
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Supplier Package FBGA
Part Status Obsolete
Pin Count 96
Organization 512Mx16
Просмотр сходства
K4B8G1646D-MYMA0CV brand manufacturers: Samsung Semiconductor, Anli stock, K4B8G1646D-MYMA0CV reference price.Samsung Semiconductor. K4B8G1646D-MYMA0CV parameters, K4B8G1646D-MYMA0CV Datasheet PDF and pin diagram description download.You can use the K4B8G1646D-MYMA0CV Memory, DSP Datesheet PDF, find K4B8G1646D-MYMA0CV pin diagram and circuit diagram and usage method of function,K4B8G1646D-MYMA0CV electronics tutorials.You can download from the Anli.