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K4F8E304HB-MGCJT Технические параметры

Samsung Semiconductor  K4F8E304HB-MGCJT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type Mobile LPDDR4 SDRAM
Chip Density (bit) 8G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 32M
Number of Bits/Word (bit) 32Bits/Word (bit)s
Data Bus Width (bit) 32
Maximum Clock Rate (MHz) 3733
Interface Type SSTL_2
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.1|1.8
Minimum Operating Temperature (°C) -25
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Extended
Number of I/O Lines (bit) 32I/O Lines (bit)s
Mounting Surface Mount
Package Width 10
Package Length 15
PCB changed 200
Supplier Package FBGA
Part Status Obsolete
Pin Count 200
Organization 256Mx32
K4F8E304HB-MGCJT brand manufacturers: Samsung Semiconductor, Anli stock, K4F8E304HB-MGCJT reference price.Samsung Semiconductor. K4F8E304HB-MGCJT parameters, K4F8E304HB-MGCJT Datasheet PDF and pin diagram description download.You can use the K4F8E304HB-MGCJT Memory, DSP Datesheet PDF, find K4F8E304HB-MGCJT pin diagram and circuit diagram and usage method of function,K4F8E304HB-MGCJT electronics tutorials.You can download from the Anli.