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K4H511638G-HCB3000 Технические параметры

Samsung Semiconductor  K4H511638G-HCB3000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR SDRAM
Chip Density (bit) 512M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 333
Свойство продукта Значение свойства
Maximum Access Time (ns) 0.7
Address Bus Width (bit) 15
Interface Type SSTL_2
Minimum Operating Supply Voltage (V) 2.3
Typical Operating Supply Voltage (V) 2.5
Maximum Operating Supply Voltage (V) 2.7
Operating Current (mA) 230
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 70
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Part Status Obsolete
Organization 32Mx16
Просмотр сходства
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