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K4H511638G-LCB3T Технические параметры

Samsung Semiconductor  K4H511638G-LCB3T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Surface Mount YES
Number of Terminals 66Terminals
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Access Time-Max 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz
Moisture Sensitivity Levels 3
Number of Words 33554432 wordsWord
Number of Words Code 32000000Words Codes
Operating Temperature-Max 70 °C
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Supply Voltage-Nom (Vsup) 2.5 V
JESD-609 Code e6
Pbfree Code Yes
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish TIN BISMUTH
HTS Code 8542.32.00.28
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Terminal Pitch 0.635 mm
Reach Compliance Code unknown
JESD-30 Code R-PDSO-G66
Qualification Status Not Qualified
Temperature Grade COMMERCIAL
Supply Current-Max 0.23 mA
Organization 32MX16
Output Characteristics 3-STATE
Memory Width 16
Standby Current-Max 0.005 A
Memory Density 536870912 bit
I/O Type COMMON
Memory IC Type DDR1 DRAM
Refresh Cycles 8192
Sequential Burst Length 2,4,8
Interleaved Burst Length 2,4,8
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K4H511638G-LCB3T Документы

  • Datasheets
K4H511638G-LCB3T brand manufacturers: Samsung Semiconductor, Anli stock, K4H511638G-LCB3T reference price.Samsung Semiconductor. K4H511638G-LCB3T parameters, K4H511638G-LCB3T Datasheet PDF and pin diagram description download.You can use the K4H511638G-LCB3T Memory, DSP Datesheet PDF, find K4H511638G-LCB3T pin diagram and circuit diagram and usage method of function,K4H511638G-LCB3T electronics tutorials.You can download from the Anli.