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K4M281633H-BN75000 Технические параметры

Samsung Semiconductor  K4M281633H-BN75000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type Mobile SDRAM
Chip Density (bit) 128M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 2M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 133
Свойство продукта Значение свойства
Maximum Access Time (ns) 5.4|7
Address Bus Width (bit) 14
Interface Type LVCMOS
Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3
Maximum Operating Supply Voltage (V) 3.6
Operating Current (mA) 70
Minimum Operating Temperature (°C) -25
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Extended
Number of I/O Lines (bit) 16I/O Lines (bit)s
Part Status Obsolete
Organization 8Mx16
Просмотр сходства
K4M281633H-BN75000 brand manufacturers: Samsung Semiconductor, Anli stock, K4M281633H-BN75000 reference price.Samsung Semiconductor. K4M281633H-BN75000 parameters, K4M281633H-BN75000 Datasheet PDF and pin diagram description download.You can use the K4M281633H-BN75000 Memory, DSP Datesheet PDF, find K4M281633H-BN75000 pin diagram and circuit diagram and usage method of function,K4M281633H-BN75000 electronics tutorials.You can download from the Anli.