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K4S280832O-LC60 Технические параметры

Samsung Semiconductor  K4S280832O-LC60 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Surface Mount YES
Number of Terminals 54Terminals
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type SDRAM
Chip Density (bit) 128M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 4M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 333
Maximum Access Time (ns) 5
Address Bus Width (bit) 13
Interface Type LVTTL
Minimum Operating Supply Voltage (V) 3
Typical Operating Supply Voltage (V) 3.3
Maximum Operating Supply Voltage (V) 3.6
Operating Current (mA) 60
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 70
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Height 1
Package Width 10.16
Package Length 22.62(Max)
PCB changed 54
Standard Package Name SOP
Supplier Package TSOP-II
Lead Shape Gull-wing
Package Description TSOP, TSOP54,.46,32
Package Style SMALL OUTLINE, THIN PROFILE
Number of Words Code 16000000Words Codes
Package Body Material PLASTIC/EPOXY
Свойство продукта Значение свойства
Package Equivalence Code TSOP54,.46,32
Access Time-Max 5 ns
Operating Temperature-Max 85 °C
Rohs Code Yes
Manufacturer Part Number K4S280832O-LC60
Clock Frequency-Max (fCLK) 166 MHz
Number of Words 16777216 wordsWord
Supply Voltage-Nom (Vsup) 3.3 V
Package Code TSOP
Package Shape RECTANGULAR
Manufacturer Samsung Semiconductor
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Risk Rank 5.84
Part Status Obsolete
Subcategory DRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Reach Compliance Code unknown
Pin Count 54
JESD-30 Code R-PDSO-G54
Qualification Status Not Qualified
Power Supplies 3.3 V
Temperature Grade OTHER
Supply Current-Max 0.06 mA
Organization 16Mx8
Output Characteristics 3-STATE
Memory Width 8
Standby Current-Max 0.002 A
Memory Density 134217728 bit
I/O Type COMMON
Memory IC Type SYNCHRONOUS DRAM
Refresh Cycles 4096
Sequential Burst Length 1,2,4,8,FP
Interleaved Burst Length 1,2,4,8
Просмотр сходства
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