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K4S56323LF-FN60 Технические параметры

Samsung Semiconductor  K4S56323LF-FN60 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Surface Mount YES
Number of Terminals 90Terminals
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Access Time-Max 5.4 ns
Clock Frequency-Max (fCLK) 166 MHz
Number of Words 8388608 wordsWord
Number of Words Code 8000000Words Codes
Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Supply Voltage-Nom (Vsup) 2.5 V
JESD-609 Code e0
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8542.32.00.24
Terminal Position BOTTOM
Terminal Form BALL
Terminal Pitch 0.8 mm
Reach Compliance Code compliant
JESD-30 Code R-PBGA-B90
Qualification Status Not Qualified
Temperature Grade OTHER
Supply Current-Max 0.2 mA
Organization 8MX32
Memory Width 32
Standby Current-Max 0.0005 A
Memory Density 268435456 bit
I/O Type COMMON
Memory IC Type SYNCHRONOUS DRAM
Refresh Cycles 4096
Sequential Burst Length 1,2,4,8,FP
Interleaved Burst Length 1,2,4,8
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K4S56323LF-FN60 Документы

K4S56323LF-FN60 brand manufacturers: Samsung Semiconductor, Anli stock, K4S56323LF-FN60 reference price.Samsung Semiconductor. K4S56323LF-FN60 parameters, K4S56323LF-FN60 Datasheet PDF and pin diagram description download.You can use the K4S56323LF-FN60 Memory, DSP Datesheet PDF, find K4S56323LF-FN60 pin diagram and circuit diagram and usage method of function,K4S56323LF-FN60 electronics tutorials.You can download from the Anli.