ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

K4S641633F-GN75000 Технические параметры

Samsung Semiconductor  K4S641633F-GN75000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Not Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type Mobile SDRAM
Chip Density (bit) 64M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 1M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 133
Maximum Access Time (ns) 7|5.4
Address Bus Width (bit) 14
Interface Type LVCMOS
Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3
Свойство продукта Значение свойства
Maximum Operating Supply Voltage (V) 3.6
Operating Current (mA) 90
Minimum Operating Temperature (°C) -25
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Extended
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Height 0.6
Package Width 8
Package Length 8
PCB changed 54
Standard Package Name CSP
Supplier Package CSP
Lead Shape Ball
Part Status Obsolete
Pin Count 54
Organization 4Mx16
K4S641633F-GN75000 brand manufacturers: Samsung Semiconductor, Anli stock, K4S641633F-GN75000 reference price.Samsung Semiconductor. K4S641633F-GN75000 parameters, K4S641633F-GN75000 Datasheet PDF and pin diagram description download.You can use the K4S641633F-GN75000 Memory, DSP Datesheet PDF, find K4S641633F-GN75000 pin diagram and circuit diagram and usage method of function,K4S641633F-GN75000 electronics tutorials.You can download from the Anli.