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K4T1G084QE-HCE7000 Технические параметры

Samsung Semiconductor  K4T1G084QE-HCE7000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 800
Maximum Access Time (ns) 0.4
Address Bus Width (bit) 17
Interface Type SSTL_1.8
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Свойство продукта Значение свойства
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 90
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 9.5
PCB changed 60
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Packaging Tray
Part Status Obsolete
Pin Count 60
Organization 128Mx8
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