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K4T1G084QG-BCE6T00 Технические параметры

Samsung Semiconductor  K4T1G084QG-BCE6T00 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 667
Maximum Access Time (ns) 0.45
Address Bus Width (bit) 17
Interface Type SSTL_1.8
Свойство продукта Значение свойства
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 65
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 9.5
PCB changed 60
Supplier Package FBGA
Part Status Obsolete
Pin Count 60
Organization 128Mx8
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K4T1G084QG-BCE6T00 brand manufacturers: Samsung Semiconductor, Anli stock, K4T1G084QG-BCE6T00 reference price.Samsung Semiconductor. K4T1G084QG-BCE6T00 parameters, K4T1G084QG-BCE6T00 Datasheet PDF and pin diagram description download.You can use the K4T1G084QG-BCE6T00 Memory, DSP Datesheet PDF, find K4T1G084QG-BCE6T00 pin diagram and circuit diagram and usage method of function,K4T1G084QG-BCE6T00 electronics tutorials.You can download from the Anli.