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K4T1G084QG-BCE7000 Технические параметры

Samsung Semiconductor  K4T1G084QG-BCE7000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 800
Maximum Access Time (ns) 0.4
Address Bus Width (bit) 17
Interface Type SSTL_1.8
Свойство продукта Значение свойства
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 70
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Number of I/O Lines (bit) 8I/O Lines (bit)s
Mounting Surface Mount
Package Width 7.5
Package Length 9.5
PCB changed 60
Supplier Package FBGA
Part Status Obsolete
Pin Count 60
Organization 128Mx8
Просмотр сходства
K4T1G084QG-BCE7000 brand manufacturers: Samsung Semiconductor, Anli stock, K4T1G084QG-BCE7000 reference price.Samsung Semiconductor. K4T1G084QG-BCE7000 parameters, K4T1G084QG-BCE7000 Datasheet PDF and pin diagram description download.You can use the K4T1G084QG-BCE7000 Memory, DSP Datesheet PDF, find K4T1G084QG-BCE7000 pin diagram and circuit diagram and usage method of function,K4T1G084QG-BCE7000 electronics tutorials.You can download from the Anli.