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K4T1G164QE-HCF8000 Технические параметры

Samsung Semiconductor  K4T1G164QE-HCF8000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Address Bus Width (bit) 16
Interface Type SSTL_1.8
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Свойство продукта Значение свойства
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Height 0.75
Package Width 7.5
Package Length 9.5
PCB changed 84
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Packaging Tray
Part Status Obsolete
Pin Count 84
Organization 64Mx16
K4T1G164QE-HCF8000 brand manufacturers: Samsung Semiconductor, Anli stock, K4T1G164QE-HCF8000 reference price.Samsung Semiconductor. K4T1G164QE-HCF8000 parameters, K4T1G164QE-HCF8000 Datasheet PDF and pin diagram description download.You can use the K4T1G164QE-HCF8000 Memory, DSP Datesheet PDF, find K4T1G164QE-HCF8000 pin diagram and circuit diagram and usage method of function,K4T1G164QE-HCF8000 electronics tutorials.You can download from the Anli.