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K4T1G164QE-HIE6T00 Технические параметры

Samsung Semiconductor  K4T1G164QE-HIE6T00 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Minimum Operating Supply Voltage (V) 1.7
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Mounting Surface Mount
Package Width 7.5
Package Length 12.5
PCB changed 84
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Obsolete
Pin Count 84
Organization 64Mx16
Просмотр сходства
K4T1G164QE-HIE6T00 brand manufacturers: Samsung Semiconductor, Anli stock, K4T1G164QE-HIE6T00 reference price.Samsung Semiconductor. K4T1G164QE-HIE6T00 parameters, K4T1G164QE-HIE6T00 Datasheet PDF and pin diagram description download.You can use the K4T1G164QE-HIE6T00 Memory, DSP Datesheet PDF, find K4T1G164QE-HIE6T00 pin diagram and circuit diagram and usage method of function,K4T1G164QE-HIE6T00 electronics tutorials.You can download from the Anli.