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K4T1G164QJ-BIE7000 Технические параметры

Samsung Semiconductor  K4T1G164QJ-BIE7000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 1G
Number of Internal Banks 8Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 800
Maximum Access Time (ns) 0.4
Address Bus Width (bit) 16
Interface Type SSTL_1.8
Minimum Operating Supply Voltage (V) 1.7
Свойство продукта Значение свойства
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 90
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Industrial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Height 0.53
Package Width 7.5
Package Length 12.5
PCB changed 84
Supplier Package FBGA
Part Status Obsolete
Pin Count 84
Organization 64Mx16
Просмотр сходства
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