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K4T51083QN-BCE70CV Технические параметры

Samsung Semiconductor  K4T51083QN-BCE70CV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive Unknown
PPAP Unknown
DRAM Type DDR2 SDRAM
Chip Density (bit) 512M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 800
Свойство продукта Значение свойства
Maximum Access Time (ns) 0.4
Address Bus Width (bit) 16
Interface Type SSTL_1.8
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 60
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 8I/O Lines (bit)s
Part Status Obsolete
Organization 64Mx8
Просмотр сходства
K4T51083QN-BCE70CV brand manufacturers: Samsung Semiconductor, Anli stock, K4T51083QN-BCE70CV reference price.Samsung Semiconductor. K4T51083QN-BCE70CV parameters, K4T51083QN-BCE70CV Datasheet PDF and pin diagram description download.You can use the K4T51083QN-BCE70CV Memory, DSP Datesheet PDF, find K4T51083QN-BCE70CV pin diagram and circuit diagram and usage method of function,K4T51083QN-BCE70CV electronics tutorials.You can download from the Anli.