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K4T51083QQ-BCE6000 Технические параметры

Samsung Semiconductor  K4T51083QQ-BCE6000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 512M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 16M
Number of Bits/Word (bit) 8Bits/Word (bit)s
Data Bus Width (bit) 8
Свойство продукта Значение свойства
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Mounting Surface Mount
Package Width 7.5
Package Length 9.5
PCB changed 60
Supplier Package FBGA
Part Status Obsolete
Pin Count 60
Organization 64Mx8
Просмотр сходства
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