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K4T51163QE-ZCE6000 Технические параметры

Samsung Semiconductor  K4T51163QE-ZCE6000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
HTS 8542.32.00.28
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 512M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 667
Maximum Access Time (ns) 0.45
Address Bus Width (bit) 15
Interface Type SSTL_1.8
Свойство продукта Значение свойства
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 170
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 9
Package Length 13
PCB changed 84
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Part Status Obsolete
Pin Count 84
Organization 32Mx16
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