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K4T51163QG-HCF7000 Технические параметры

Samsung Semiconductor  K4T51163QG-HCF7000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 512M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 800
Maximum Access Time (ns) 0.45
Address Bus Width (bit) 16
Interface Type SSTL_18
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Свойство продукта Значение свойства
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 165
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 70
Supplier Temperature Grade Commercial
Number of I/O Lines (bit) 16I/O Lines (bit)s
Mounting Surface Mount
Package Width 9
Package Length 13
PCB changed 84
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Packaging Tray
Part Status Obsolete
Pin Count 84
Organization 32Mx16
K4T51163QG-HCF7000 brand manufacturers: Samsung Semiconductor, Anli stock, K4T51163QG-HCF7000 reference price.Samsung Semiconductor. K4T51163QG-HCF7000 parameters, K4T51163QG-HCF7000 Datasheet PDF and pin diagram description download.You can use the K4T51163QG-HCF7000 Memory, DSP Datesheet PDF, find K4T51163QG-HCF7000 pin diagram and circuit diagram and usage method of function,K4T51163QG-HCF7000 electronics tutorials.You can download from the Anli.