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K4T51163QI-HCE60T00 Технические параметры

Samsung Semiconductor  K4T51163QI-HCE60T00 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 512M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 667
Свойство продукта Значение свойства
Maximum Access Time (ns) 0.45
Address Bus Width (bit) 15
Interface Type SSTL_1.8
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 115
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Number of I/O Lines (bit) 16I/O Lines (bit)s
Part Status Obsolete
Organization 32Mx16
Просмотр сходства
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