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K4T51163QI-HIE6000 Технические параметры
Samsung Semiconductor K4T51163QI-HIE6000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| ECCN (US) | EAR99 | |
| Automotive | No | |
| PPAP | No | |
| DRAM Type | DDR2 SDRAM | |
| Chip Density (bit) | 512M | |
| Number of Internal Banks | 4Internal Banks | |
| Number of Words per Bank | 8M | |
| Number of Bits/Word (bit) | 16Bits/Word (bit)s | |
| Data Bus Width (bit) | 16 | |
| Maximum Clock Rate (MHz) | 667 | |
| Maximum Access Time (ns) | 0.45 | |
| Address Bus Width (bit) | 15 | |
| Interface Type | SSTL_1.8 | |
| Minimum Operating Supply Voltage (V) | 1.7 | |
| Typical Operating Supply Voltage (V) | 1.8 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Operating Supply Voltage (V) | 1.9 | |
| Operating Current (mA) | 115 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 95 | |
| Supplier Temperature Grade | Industrial | |
| Number of I/O Lines (bit) | 16I/O Lines (bit)s | |
| Mounting | Surface Mount | |
| Package Width | 7.5 | |
| Package Length | 12.5 | |
| PCB changed | 84 | |
| Standard Package Name | BGA | |
| Supplier Package | FBGA | |
| Lead Shape | Ball | |
| Packaging | Tray | |
| Part Status | Obsolete | |
| Pin Count | 84 | |
| Organization | 32Mx16 |
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