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K4T51163QQ-BCE7T00 Технические параметры

Samsung Semiconductor  K4T51163QQ-BCE7T00 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive No
PPAP No
DRAM Type DDR2 SDRAM
Chip Density (bit) 512M
Number of Internal Banks 4Internal Banks
Number of Words per Bank 8M
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Bus Width (bit) 16
Свойство продукта Значение свойства
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Mounting Surface Mount
Package Width 7.5
Package Length 12.5
PCB changed 84
Supplier Package FBGA
Part Status Obsolete
Pin Count 84
Organization 32Mx16
K4T51163QQ-BCE7T00 brand manufacturers: Samsung Semiconductor, Anli stock, K4T51163QQ-BCE7T00 reference price.Samsung Semiconductor. K4T51163QQ-BCE7T00 parameters, K4T51163QQ-BCE7T00 Datasheet PDF and pin diagram description download.You can use the K4T51163QQ-BCE7T00 Memory, DSP Datesheet PDF, find K4T51163QQ-BCE7T00 pin diagram and circuit diagram and usage method of function,K4T51163QQ-BCE7T00 electronics tutorials.You can download from the Anli.