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K6F1616U6A-EF55T00 Технические параметры

Samsung Semiconductor  K6F1616U6A-EF55T00 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Not Compliant
ECCN (US) 3A991.b.2.a
Automotive No
PPAP No
Chip Density (bit) 16M
Number of Words 1MWord
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Rate Architecture SDR
Address Bus Width (bit) 20
Timing Type Asynchronous
Свойство продукта Значение свойства
Max. Access Time (ns) 55
Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3
Maximum Operating Supply Voltage (V) 3.3
Operating Current (mA) 30
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial
Packaging Tape and Reel
Part Status Obsolete
Number of Ports 1Port
Просмотр сходства
K6F1616U6A-EF55T00 brand manufacturers: Samsung Semiconductor, Anli stock, K6F1616U6A-EF55T00 reference price.Samsung Semiconductor. K6F1616U6A-EF55T00 parameters, K6F1616U6A-EF55T00 Datasheet PDF and pin diagram description download.You can use the K6F1616U6A-EF55T00 Memory, DSP Datesheet PDF, find K6F1616U6A-EF55T00 pin diagram and circuit diagram and usage method of function,K6F1616U6A-EF55T00 electronics tutorials.You can download from the Anli.