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K6F8016U3A-TF70000 Технические параметры

Samsung Semiconductor  K6F8016U3A-TF70000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Not Compliant
ECCN (US) 3A991.b.2.a
Automotive No
PPAP No
Chip Density (bit) 8M
Number of Words 512KWord
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Rate Architecture SDR
Address Bus Width (bit) 19
Timing Type Asynchronous
Свойство продукта Значение свойства
Max. Access Time (ns) 70
Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3
Maximum Operating Supply Voltage (V) 3.3
Operating Current (mA) 30
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial
Packaging Tray
Part Status Obsolete
Number of Ports 1Port
Просмотр сходства
K6F8016U3A-TF70000 brand manufacturers: Samsung Semiconductor, Anli stock, K6F8016U3A-TF70000 reference price.Samsung Semiconductor. K6F8016U3A-TF70000 parameters, K6F8016U3A-TF70000 Datasheet PDF and pin diagram description download.You can use the K6F8016U3A-TF70000 Memory, DSP Datesheet PDF, find K6F8016U3A-TF70000 pin diagram and circuit diagram and usage method of function,K6F8016U3A-TF70000 electronics tutorials.You can download from the Anli.