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K6F8016V3A-TF55000 Технические параметры

Samsung Semiconductor  K6F8016V3A-TF55000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Not Compliant
ECCN (US) 3A991.b.2.a
Automotive No
PPAP No
Chip Density (bit) 8M
Number of Words 512KWord
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Rate Architecture SDR
Address Bus Width (bit) 19
Timing Type Asynchronous
Свойство продукта Значение свойства
Max. Access Time (ns) 55
Minimum Operating Supply Voltage (V) 3
Typical Operating Supply Voltage (V) 3.3
Maximum Operating Supply Voltage (V) 3.6
Operating Current (mA) 45
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial
Packaging Tray
Part Status Obsolete
Number of Ports 1Port
Просмотр сходства
K6F8016V3A-TF55000 brand manufacturers: Samsung Semiconductor, Anli stock, K6F8016V3A-TF55000 reference price.Samsung Semiconductor. K6F8016V3A-TF55000 parameters, K6F8016V3A-TF55000 Datasheet PDF and pin diagram description download.You can use the K6F8016V3A-TF55000 Memory, DSP Datesheet PDF, find K6F8016V3A-TF55000 pin diagram and circuit diagram and usage method of function,K6F8016V3A-TF55000 electronics tutorials.You can download from the Anli.