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K6R1016V1D-TC10000 Технические параметры

Samsung Semiconductor  K6R1016V1D-TC10000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Not Compliant
ECCN (US) 3A991.b.2.b
Automotive No
PPAP No
Chip Density (bit) 1M
Number of Words 64KWord
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Rate Architecture SDR
Address Bus Width (bit) 16
Timing Type Asynchronous
Max. Access Time (ns) 10
Minimum Operating Supply Voltage (V) 3
Typical Operating Supply Voltage (V) 3.3
Maximum Operating Supply Voltage (V) 3.6
Свойство продукта Значение свойства
Operating Current (mA) 65
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 70
Supplier Temperature Grade Commercial
Mounting Surface Mount
Package Height 1
Package Width 10.16
Package Length 18.81(Max)
PCB changed 44
Standard Package Name SOP
Supplier Package TSOP-II
Lead Shape Gull-wing
Packaging Tube
Part Status Obsolete
Pin Count 44
Number of Ports 1Port
Просмотр сходства
K6R1016V1D-TC10000 brand manufacturers: Samsung Semiconductor, Anli stock, K6R1016V1D-TC10000 reference price.Samsung Semiconductor. K6R1016V1D-TC10000 parameters, K6R1016V1D-TC10000 Datasheet PDF and pin diagram description download.You can use the K6R1016V1D-TC10000 Memory, DSP Datesheet PDF, find K6R1016V1D-TC10000 pin diagram and circuit diagram and usage method of function,K6R1016V1D-TC10000 electronics tutorials.You can download from the Anli.