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K6R4016C1D-TI10000 Технические параметры

Samsung Semiconductor  K6R4016C1D-TI10000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
EU RoHS Not Compliant
ECCN (US) 3A991.b.2.a
Automotive No
PPAP No
Chip Density (bit) 4M
Number of Words 256KWord
Number of Bits/Word (bit) 16Bits/Word (bit)s
Data Rate Architecture SDR
Address Bus Width (bit) 18
Timing Type Asynchronous
Max. Access Time (ns) 10
Process Technology CMOS
Minimum Operating Supply Voltage (V) 4.5
Typical Operating Supply Voltage (V) 5
Maximum Operating Supply Voltage (V) 5.5
Свойство продукта Значение свойства
Operating Current (mA) 75
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial
Mounting Surface Mount
Package Height 1
Package Width 10.16
Package Length 18.81(Max)
PCB changed 44
Standard Package Name SOP
Supplier Package TSOP-II
Lead Shape Gull-wing
Packaging Tray
Part Status Obsolete
Pin Count 44
Number of Ports 1Port
Просмотр сходства
K6R4016C1D-TI10000 brand manufacturers: Samsung Semiconductor, Anli stock, K6R4016C1D-TI10000 reference price.Samsung Semiconductor. K6R4016C1D-TI10000 parameters, K6R4016C1D-TI10000 Datasheet PDF and pin diagram description download.You can use the K6R4016C1D-TI10000 Memory, DSP Datesheet PDF, find K6R4016C1D-TI10000 pin diagram and circuit diagram and usage method of function,K6R4016C1D-TI10000 electronics tutorials.You can download from the Anli.