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K8P6415UQB-DI4BT Технические параметры

Samsung Semiconductor  K8P6415UQB-DI4BT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация USB Flash Drives
Марка
EU RoHS Compliant
ECCN (US) 3A991.b.1.a
Automotive No
PPAP No
Cell Type NOR
Chip Density (bit) 64M
Block Organization Asymmetrical
Location of Boot Block Bottom|Top
Address Bus Width (bit) 22
Bank Size 8/8/24/24Mb
Number of Bits/Word (bit) 16Bits/Word (bit)s
Number of Words 4MWord
Programmability Yes
Timing Type Asynchronous
Max. Access Time (ns) 60
Maximum Erase Time (S) 113.6/Chip
Maximum Page Access Time (ns) 25
Maximum Programming Time (ms) 50400/Chip
OE Access Time (ns) 25
Process Technology CMOS
Interface Type Parallel
Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3
Maximum Operating Supply Voltage (V) 3.6
Свойство продукта Значение свойства
Programming Voltage (V) 2.7 to 3.6
Operating Current (mA) 55
Page Read Current (mA) 15
Program Current (mA) 30
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial
Command Compatible No
ECC Support No
Support of Page Mode Yes
Mounting Surface Mount
Package Height 0.58
Package Width 6
Package Length 8
PCB changed 48
Standard Package Name BGA
Supplier Package FBGA
Lead Shape Ball
Packaging Tape and Reel
Part Status Obsolete
Pin Count 48
Architecture Sectored
Sector Size 8Kbyte x 16|64Kbyte x 126
Page Size 8Words
Boot Block Yes
Number of Banks 4Banks
Просмотр сходства
K8P6415UQB-DI4BT brand manufacturers: Samsung Semiconductor, Anli stock, K8P6415UQB-DI4BT reference price.Samsung Semiconductor. K8P6415UQB-DI4BT parameters, K8P6415UQB-DI4BT Datasheet PDF and pin diagram description download.You can use the K8P6415UQB-DI4BT USB Flash Drives, DSP Datesheet PDF, find K8P6415UQB-DI4BT pin diagram and circuit diagram and usage method of function,K8P6415UQB-DI4BT electronics tutorials.You can download from the Anli.