Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
SGH80N60UFD Технические параметры
Samsung Semiconductor SGH80N60UFD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TO-3P | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Nom (toff) | 167 ns | |
| Turn-on Time-Nom (ton) | 50 ns | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | HIGH SPEED SWITCHING | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 2 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Fall Time-Max (tf) | 280 ns |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ