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MGD633 Технические параметры
Sanken MGD633 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | Sanken | |
| Package / Case | MELF, 0204 | |
| Mounting Type | Through Hole | |
| Supplier Device Package | Mini MELF | |
| Package | Tape & Reel (TR) | |
| Mfr | Vishay Beyschlag/Draloric/BC Components | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 50 A | |
| Base Product Number | MGD6 | |
| Test Conditions | 300V, 50A, 39Ohm, 15V | |
| Operating Temperature | -55°C ~ 125°C | |
| Series | SMM0204 | |
| Size / Dimension | 0.055 Dia x 0.142 L (1.40mm x 3.60mm) | |
| Tolerance | ±0.1% | |
| Number of Terminations | 2Terminations | |
| Temperature Coefficient | ±25ppm/°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Resistance | 4.22 kOhms | |
| Composition | Thin Film | |
| Power (Watts) | 0.25W, 1/4W | |
| Failure Rate | - | |
| Input Type | Standard | |
| Power - Max | 150 W | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A | |
| IGBT Type | Trench | |
| Gate Charge | 65 nC | |
| Current - Collector Pulsed (Icm) | 100 A | |
| Td (on/off) @ 25°C | 75ns/300ns | |
| Switching Energy | - | |
| Reverse Recovery Time (trr) | 350 ns | |
| Features | Anti-Sulfur, Automotive AEC-Q200, Pulse Withstanding | |
| Height Seated (Max) | - | |
| Ratings | AEC-Q200 |
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