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SMA5117 Технические параметры
Sanken SMA5117 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Sanken | |
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 12-SIP | |
| Transistor Element Material | SILICON | |
| Number of Elements | 6 Elements | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 2001 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 12Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Max Power Dissipation | 4W | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 12 | |
| JESD-30 Code | R-PSIP-T12 | |
| Qualification Status | Not Qualified | |
| Configuration | COMPLEX | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 4W | |
| FET Type | 6 N-Channel (3-Phase Bridge) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 3.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 10V | |
| Drain to Source Voltage (Vdss) | 250V | |
| Continuous Drain Current (ID) | 7A | |
| Drain Current-Max (Abs) (ID) | 7A | |
| Drain-source On Resistance-Max | 0.25Ohm | |
| Pulsed Drain Current-Max (IDM) | 15A | |
| DS Breakdown Voltage-Min | 250V | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | RoHS Compliant |
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