Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
SMA5125 Технические параметры
Sanken SMA5125 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Sanken | |
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 12-SIP | |
| Transistor Element Material | SILICON | |
| Number of Elements | 6 Elements | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 2003 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 12Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Max Power Dissipation | 4W | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 12 | |
| JESD-30 Code | R-PSIP-T12 | |
| Qualification Status | Not Qualified | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 4W | |
| FET Type | 3 N and 3 P-Channel (3-Phase Bridge) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 140m Ω @ 5A, 4V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 10V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 10A | |
| Drain-source On Resistance-Max | 0.14Ohm | |
| Pulsed Drain Current-Max (IDM) | 15A | |
| DS Breakdown Voltage-Min | 60V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ