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MGF65A3L Технические параметры
Sanken Electric Co., Ltd. MGF65A3L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO3P-3L | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Collector Current (DC) | 50(A) | |
| Operating Temperature Classification | Military | |
| Rad Hardened | No | |
| Operating Temperature (Max.) | 175C | |
| Operating Temperature (Min.) | -55C | |
| Gate to Emitter Voltage (Max) | ±30(V) | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 50 A | |
| Base Product Number | MGF65 | |
| Mfr | Sanken | |
| Product Status | Active | |
| Test Conditions | 400V, 30A, 10Ohm, 15V | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 60 ns | |
| Turn-off Time-Nom (toff) | 280 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | MGF65A3L | |
| Package Shape | RECTANGULAR |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Sanken Electric Co Ltd | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | SANKEN ELECTRIC CO LTD | |
| Risk Rank | 8.42 | |
| Operating Temperature | 175°C (TJ) | |
| Series | - | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 217 W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | |
| Channel Type | N | |
| Vce(on) (Max) @ Vge, Ic | 1.96V @ 15V, 30A | |
| Collector Current-Max (IC) | 50 A | |
| IGBT Type | Trench Field Stop | |
| Collector-Emitter Voltage-Max | 650 V | |
| Gate Charge | 60 nC | |
| Current - Collector Pulsed (Icm) | 90 A | |
| Td (on/off) @ 25°C | 30ns/90ns | |
| Switching Energy | 600µJ (on), 600µJ (off) | |
| Reverse Recovery Time (trr) | 50 ns |
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