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LB1212 Технические параметры
Sanyo LB1212 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Power Transformers | |
| Марка | Sanyo | |
| Surface Mount | NO | |
| Number of Terminals | 16Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | IN-LINE, R-PDIP-T16 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 75 °C | |
| Manufacturer Part Number | LB1212 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | SANYO Electric Co Ltd | |
| Number of Elements | 7 Elements | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SANYO ELECTRIC CO LTD | |
| Risk Rank | 5.8 | |
| Part Package Code | DIP |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | Other Transistors | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 16 | |
| JESD-30 Code | R-PDIP-T16 | |
| Qualification Status | Not Qualified | |
| Configuration | COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 960 W | |
| Collector Current-Max (IC) | 0.2 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Collector-Emitter Voltage-Max | 35 V |
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