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MUN2235T1G Технические параметры

Sanyo  MUN2235T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка Sanyo
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Package Bulk
Current-Collector (Ic) (Max) 100 mA
Mfr Sanyo
Product Status Active
Свойство продукта Значение свойства
Series -
Power - Max 230 mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Просмотр сходства
MUN2235T1G brand manufacturers: Sanyo, Anli stock, MUN2235T1G reference price.Sanyo. MUN2235T1G parameters, MUN2235T1G Datasheet PDF and pin diagram description download.You can use the MUN2235T1G Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find MUN2235T1G pin diagram and circuit diagram and usage method of function,MUN2235T1G electronics tutorials.You can download from the Anli.