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2N2222A Технические параметры

Seme LAB  2N2222A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Seme LAB
Package / Case TO-18-3
Emitter- Base Voltage VEBO 6 V
Pd - Power Dissipation 500 mW
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 100 at 150 mA, 10 V
Collector-Emitter Saturation Voltage 1 V
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles Through Hole
Gain Bandwidth Product fT 300 MHz
Manufacturer TT Electronics
Свойство продукта Значение свойства
Brand Semelab / TT Electronics
DC Current Gain hFE Max 300 at 150 mA, 10 V
Collector- Emitter Voltage VCEO Max 40 V
Subcategory Transistors
Technology Si
Configuration Single
Product Type BJTs - Bipolar Transistors
Collector Base Voltage (VCBO) 75 V
Continuous Collector Current 800 mA
Product Category Bipolar Transistors - BJT
Width 5.84 mm
Height 5.33 mm
Length 5.84 mm
Просмотр сходства
2N2222A brand manufacturers: Seme LAB, Anli stock, 2N2222A reference price.Seme LAB. 2N2222A parameters, 2N2222A Datasheet PDF and pin diagram description download.You can use the 2N2222A Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N2222A pin diagram and circuit diagram and usage method of function,2N2222A electronics tutorials.You can download from the Anli.