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2N2222ACSM-QR-EB Технические параметры

Semelab  2N2222ACSM-QR-EB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Package / Case TO-18-3
Mounting Styles Through Hole
Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 40 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 1 V
Pd - Power Dissipation 500 mW
Свойство продукта Значение свойства
Gain Bandwidth Product fT 300 MHz
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 100 at 150 mA, 10 V
DC Current Gain hFE Max 300 at 150 mA, 10 V
Factory Pack QuantityFactory Pack Quantity 100
Configuration Single
Collector Base Voltage (VCBO) 75 V
Continuous Collector Current 800 mA
Просмотр сходства
2N2222ACSM-QR-EB brand manufacturers: Semelab, Anli stock, 2N2222ACSM-QR-EB reference price.Semelab. 2N2222ACSM-QR-EB parameters, 2N2222ACSM-QR-EB Datasheet PDF and pin diagram description download.You can use the 2N2222ACSM-QR-EB Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N2222ACSM-QR-EB pin diagram and circuit diagram and usage method of function,2N2222ACSM-QR-EB electronics tutorials.You can download from the Anli.