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D1028UK Технические параметры
Seme LAB D1028UK technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Seme LAB | |
| Mounting Type | Screw Mount | |
| Package / Case | DR | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements per Chip | 2Elements per Chips | |
| Package Type | DR | |
| Maximum Operating Temperature | +200 °C | |
| Channel Mode | Enhancement | |
| Vds - Drain-Source Breakdown Voltage | 70 V | |
| Vgs th - Gate-Source Threshold Voltage | 1 V to 7 V | |
| Pd - Power Dissipation | 438 W | |
| Transistor Polarity | N-Channel | |
| Vgs - Gate-Source Voltage | 20 V | |
| Unit Weight | 1.316671 oz | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Mounting Styles | SMD/SMT | |
| Manufacturer | TT Electronics | |
| Brand | Semelab / TT Electronics | |
| Id - Continuous Drain Current | 30 A | |
| Package Description | CERAMIC, DR, 5 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | D1028UK | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TT ELECTRONICS PLC |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.14 | |
| Series | TetraFET | |
| ECCN Code | EAR99 | |
| Type | RF Power MOSFET | |
| Additional Feature | LOW NOISE | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 5 | |
| JESD-30 Code | R-CDFM-F4 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 175 MHz | |
| Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Output Power | 300 W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | RF MOSFET Transistors | |
| Transistor Type | DMOS FET | |
| Gain | 13 dB | |
| DS Breakdown Voltage-Min | 70 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Product Category | RF MOSFET Transistors | |
| Width | 10.16mm | |
| Height | 5.08mm | |
| Length | 34.03mm |
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