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D2013UK Технические параметры
Seme LAB D2013UK technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | Seme LAB | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Mounting | Screw | |
| Rad Hardened | No | |
| Frequency(Max) | 2000(MHz) | |
| Number of Elements | 2 Elements | |
| Drain Efficiency (Typ) | 40(Min)(%) | |
| Channel Mode | Enhancement | |
| Output Power (Max) | 20 | |
| Power Dissipation (Max) | 83000(mW) | |
| Operating Temp Range | -65C to 200C | |
| Input Capacitance (Typ)@Vds | 48(MAX)@0V(pF) | |
| Package Type | CASE DK | |
| Power Gain (Typ)@Vds | 10(MIN)@28V(dB) | |
| Continuous Drain Current | 4(A) | |
| Drain Source Voltage (Max) | 65(V) | |
| Package Description | FLANGE MOUNT, R-CDFM-F4 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | D2013UK | |
| Package Shape | RECTANGULAR | |
| Manufacturer | TT Electronics Power and Hybrid / Semelab Limited | |
| Part Life Cycle Code | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ihs Manufacturer | SEMELAB LTD | |
| Risk Rank | 5.1 | |
| Drain Current-Max (ID) | 4 A | |
| Usage Level | Military grade | |
| JESD-609 Code | e4 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Terminal Finish | GOLD | |
| Applications | HF/VHF/UHF | |
| Additional Feature | LOW NOISE | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 5 | |
| JESD-30 Code | R-CDFM-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Screening Level | Military | |
| DS Breakdown Voltage-Min | 65 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Frequency (Min) | 1(MHz) |
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