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D2225UK Технические параметры
Semelab D2225UK technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | SOIC-8 | |
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Id - Continuous Drain Current | 4 A | |
| Vds - Drain-Source Breakdown Voltage | 40 V | |
| Maximum Operating Temperature | + 150 C | |
| Mounting Styles | SMD/SMT | |
| Pd - Power Dissipation | 17.5 W | |
| Factory Pack QuantityFactory Pack Quantity | 50 | |
| Vgs - Gate-Source Voltage | 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 0.5 V to 7 V | |
| Package Description | SMALL OUTLINE, R-XDSO-G8 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | UNSPECIFIED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | D2225UK | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMELAB LTD |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.11 | |
| Part Package Code | SOT | |
| Drain Current-Max (ID) | 4 A | |
| JESD-609 Code | e4 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Type | RF Power MOSFET | |
| Terminal Finish | GOLD | |
| Additional Feature | LOW NOISE | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | R-XDSO-G8 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 1 GHz | |
| Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Output Power | 5 W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | DMOS FET | |
| Gain | 10 dB | |
| DS Breakdown Voltage-Min | 40 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
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