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IRF230 Технические параметры
Seme LAB IRF230 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Seme LAB | |
| Package / Case | TO-3 | |
| RoHS | Non-Compliant | |
| Vds - Drain-Source Breakdown Voltage | 200 V | |
| Typical Turn-On Delay Time | 35 ns | |
| Pd - Power Dissipation | 75 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Mounting Styles | Through Hole | |
| Channel Mode | Enhancement |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | TT Electronics | |
| Brand | Semelab / TT Electronics | |
| Rds On - Drain-Source Resistance | 400 mOhms | |
| Typical Turn-Off Delay Time | 60 ns | |
| Id - Continuous Drain Current | 9 A | |
| Series | IRF | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Rise Time | 80 ns | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Product Category | MOSFET |
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