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GP1M009A090N Технические параметры

SemiQ  GP1M009A090N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка SemiQ
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
Current - Continuous Drain (Id) @ 25℃ 9.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 312W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2324pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 900V
Vgs (Max) ±30V
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GP1M009A090N Документы

GP1M009A090N brand manufacturers: SemiQ, Anli stock, GP1M009A090N reference price.SemiQ. GP1M009A090N parameters, GP1M009A090N Datasheet PDF and pin diagram description download.You can use the GP1M009A090N Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find GP1M009A090N pin diagram and circuit diagram and usage method of function,GP1M009A090N electronics tutorials.You can download from the Anli.