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GP1M010A080H Технические параметры

SemiQ  GP1M010A080H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка SemiQ
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Current - Continuous Drain (Id) @ 25℃ 9.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 290W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.05Ohm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2336pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±30V

GP1M010A080H Документы

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