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GP2T080A120H Технические параметры

SemiQ  GP2T080A120H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка SemiQ
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4
Mfr SemiQ
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Power Dissipation (Max) 188W (Tc)
Base Product Number GP2T080A
Vds - Drain-Source Breakdown Voltage 1.2 kV
Typical Turn-On Delay Time 9 ns
Vgs th - Gate-Source Threshold Voltage 4 V
Pd - Power Dissipation 188 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 10 V, + 25 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles Through Hole
Channel Mode Depletion
Manufacturer SemiQ
Свойство продукта Значение свойства
Brand SemiQ
Qg - Gate Charge 61 nC
Rds On - Drain-Source Resistance 100 mOhms
RoHS Details
Typical Turn-Off Delay Time 15 ns
Id - Continuous Drain Current 35 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 1377 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 20 V
Rise Time 4 ns
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) +25V, -10V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
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