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JAN1N5807US Технические параметры
Semtech JAN1N5807US technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Bridge Rectifiers | |
| Марка | Semtech | |
| Mounting Type | Surface Mount | |
| Package / Case | SQ-MELF | |
| Surface Mount | YES | |
| Supplier Device Package | - | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| EU RoHS | Not Compliant | |
| ECCN (US) | EAR99 | |
| HTS | 8504.40.95.70 | |
| Automotive | No | |
| PPAP | No | |
| Maximum DC Reverse Voltage (V) | 50 | |
| Peak Reverse Repetitive Voltage (V) | 50 | |
| Maximum Continuous Forward Current (A) | 6@Ta=75C | |
| Peak Non-Repetitive Surge Current (A) | 125 | |
| Peak Forward Voltage (V) | 0.875@4A | |
| Peak Reverse Current (uA) | 5 | |
| Peak Reverse Recovery Time (ns) | 30 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 175 | |
| Supplier Temperature Grade | Military | |
| Mounting | Surface Mount | |
| Package Height | 3.76(Max) | |
| Package Width | 3.76(Max) | |
| Package Length | 5.72(Max) | |
| PCB changed | 2 | |
| Package | Bulk | |
| Mfr | Semtech Corporation | |
| Product Status | Discontinued at Digi-Key | |
| Package Description | E-LELF-R2 | |
| Package Style | LONG FORM | |
| Package Body Material | GLASS | |
| Operating Temperature-Min | -65 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | JAN1N5807US | |
| Package Shape | ELLIPTICAL | |
| Manufacturer | Sensitron Semiconductors |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SENSITRON SEMICONDUCTOR | |
| Forward Voltage-Max (VF) | 0.875 V | |
| Risk Rank | 5.3 | |
| Part Package Code | MELF | |
| Series | MIL-PRF-19500/477 | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| Part Status | Active | |
| Type | Switching Diode | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Applications | ULTRA FAST RECOVERY | |
| Additional Feature | HIGH RELIABILITY, METALLURGICALLY BONDED | |
| HTS Code | 8541.10.00.80 | |
| Subcategory | Rectifier Diodes | |
| Terminal Position | END | |
| Terminal Form | WRAP AROUND | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| Reference Standard | MIL-19500 | |
| JESD-30 Code | E-LELF-R2 | |
| Qualification Status | Qualified | |
| Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V | |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A | |
| Case Connection | ISOLATED | |
| Operating Temperature - Junction | - | |
| Output Current-Max | 6 A | |
| Voltage - DC Reverse (Vr) (Max) | 50 V | |
| Current - Average Rectified (Io) | 6A | |
| Number of Phases | 1Phase | |
| Rep Pk Reverse Voltage-Max | 50 V | |
| Capacitance @ Vr, F | 60pF @ 5V, 1MHz | |
| Non-rep Pk Forward Current-Max | 125 A | |
| Reverse Recovery Time-Max | 0.03 µs | |
| Reverse Recovery Time (trr) | 30 ns |
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