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JANTX1N5622 Технические параметры
Semtech JANTX1N5622 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | Semtech | |
| Surface Mount | NO | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Package | Bulk | |
| Base Product Number | 1N5622 | |
| Mfr | Semtech Corporation | |
| Product Status | Discontinued at Digi-Key | |
| Package Description | E-LALF-W2 | |
| Package Style | LONG FORM | |
| Package Body Material | GLASS | |
| Operating Temperature-Min | -65 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | JANTX1N5622 | |
| Package Shape | ELLIPTICAL | |
| Manufacturer | Sensitron Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SENSITRON SEMICONDUCTOR | |
| Forward Voltage-Max (VF) | 1.2 V | |
| Risk Rank | 5.2 | |
| Series | * | |
| JESD-609 Code | e0 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | No | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | HIGH RELIABILITY, METALLURGICALLY BONDED | |
| HTS Code | 8541.10.00.80 | |
| Subcategory | Rectifier Diodes | |
| Terminal Position | AXIAL | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| Reference Standard | MIL-19500 | |
| JESD-30 Code | E-LALF-W2 | |
| Qualification Status | Qualified | |
| Configuration | SINGLE | |
| Diode Type | RECTIFIER DIODE | |
| Case Connection | ISOLATED | |
| Output Current-Max | 1 A | |
| Reverse Recovery Time | 2000 | |
| Rep Pk Reverse Voltage-Max | 1000 V | |
| Non-rep Pk Forward Current-Max | 50 A | |
| Diode Configuration | Single | |
| Repetitive Peak Reverse Voltage | 1000 | |
| Reverse Recovery Time-Max | 2 µs |
Индекс :
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